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PD - 96113A
IRF7452QPbF
HEXFET(R) Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free
S S S G
VDSS
100V
RDS(on) max
0.060
ID
4.5A
Description
These HEXFET(R) Power MOSFET's in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
4.5 3.6 36 2.5 0.02 30 3.5 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Typical SMPS Topologies l Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input with Passive Reset Forward Converter Primary
Notes through are on page 8
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IRF7452QPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 100 --- --- 3.0 --- --- --- --- Min. 3.4 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- Typ. --- 33 7.3 16 9.5 11 16 13 930 300 84 1370 170 280 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.060 VGS = 10V, ID = 2.7A 5.5 V VDS = VGS, ID = 250A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 24V nA -100 VGS = -24V Max. Units Conditions --- S VDS = 50V, ID = 2.7A 50 ID = 2.7A 11 nC VDS = 80V 24 VGS = 10V, --- VDD = 50V --- ID = 2.7A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
200 4.5 0.25
Units
mJ A mJ
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 77 270 2.3 A 36 1.3 120 410 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.7A, VGS = 0V TJ = 25C, IF = 2.7A di/dt = 100A/s
D
S
2
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IRF7452QPbF
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1
1
5.0V
0.1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.01 0.1
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.5A
I D , Drain-to-Source Current (A)
2.0
10
TJ = 150 C
1.5
1
TJ = 25 C
1.0
0.5
0.1 5.0
V DS = 50V 20s PULSE WIDTH 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7452QPbF
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 2.7A VDS = 80V VDS = 50V VDS = 20V
VGS , Gate-to-Source Voltage (V)
C ds
16
10000
C, Capacitance(pF)
12
1000
Ciss Coss
8
100
Crss
4
10 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
TJ = 150 C
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7452QPbF
5.0
VDS
4.0
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
3.0
-V DD
10V
2.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2
Thermal Response (Z thJA )
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7452QPbF
RDS(on) , Drain-to -Source On Resistance ()
RDS (on) , Drain-to-Source On Resistance ()
0.06
0.08
VGS = 10V
0.07
0.05 VGS = 15V
0.06
ID = 2.7A
0.05
0.04 0 4 8 12 16 20 ID , Drain Current (A)
0.04 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
500
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
400
Charge
IG ID
BOTTOM
ID 2.0A 3.6A 4.5A
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
V(BR)DSS tp
VDS L
100
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7452QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255]
F OOTPRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DATE CODE (YWW) P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY SIT E CODE LOT CODE PART NUMBER
Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/
INTERNATIONAL RECT IFIER LOGO
XXXX F7101
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IRF7452QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 20mH
RG = 25, IAS = 4.5A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010
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